Gehyphen;Si alloy microstructure fabrication by directhyphen;laser writing with analysis by Raman microprobe spectroscopy

摘要

Micronhyphen;dimension structures of germaniumhyphen;silicon alloys of various compositions are formed by several directhyphen;laser writing techniques, including pyrolytic deposition of silicon from silane on laserhyphen;melted germanium substrates and codeposition from silane/germane mixtures on different absorbing substrates.Insitucomposition analysis of these polycrystalline alloy microstructures is performed by Raman microprobe analysis. The measured Raman shifts and widths of the laserhyphen;deposited alloys are found to be in better agreement with published Raman data on germaniumhyphen;silicon alloy films than with the Raman data on alloy bulk solids. In the codeposition of alloys, the decomposition of germane to form Ge is observed to be about six times faster than the decomposition of silane to form Si, independent of the silane/germane ratio, laser power, and substrate type.