Preparation of perovskite conductive LaNiO3films by metalorganic decomposition

摘要

Perovskite conductive LaNiO3films, 250 nm thick, were prepared by metalorganic decomposition. Rutherford backscattering spectrometry was used to determine the film thickness and composition. The xhyphen;ray diffraction patterns of LaNiO3films indicated that the lowest temperature for crystallization is about 530thinsp;deg;C. The measurement of resistivity as a function of annealing temperatures showed that the good metallic conductive LaNiO3films could be obtained at 550thinsp;deg;C. The films with the lowest resistivity (4.0times;10minus;4OHgr;thinsp;cm) were obtained on quartz by annealing in oxygen at 700thinsp;deg;C. copy;1996 American Institute of Physics.