Influence of temperature on defect creation during plasma exposure of SiO2films

摘要

Chemical vapor deposited silicon dioxide films have been exposed to ultraviolet radiation from a microwave excited Kr/F plasma. Sample temperatures during exposure were in the range 82ndash;300 K. The creation of oxygenhyphen;vacancy like defects was measured as a function of exposure time and temperature. Two possible defect creation mechanisms are suggested which would account for reduced creation efficiency at low temperatures, one involving hole injection from the substrate and the other, interaction of H with Simdash;H bonds. Both processes are diffusion limited.