Photoluminescence experiments under resonant excitation have been performed at low temperature in Mg+‐implanted bulk InP. The energy difference between the ground 1S3/2and excited 2S3/2states of the Mg acceptor is accurately measured by two‐hole spectroscopy of Mg‐acceptor bound exciton. Selective excitation of donor‐acceptor pairs luminescence allows the identification of a set of 2P3/2and 2P5/2excited states. The measured values to be compared with similar published data obtained for Zn and C represent an additional step in the process of accurate identification of acceptors in InP.
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