Lighthyphen;induced defects in hydrogenated amorphous silicon alloys

摘要

The effect of light illumination on gap state absorption of hydrogenated amorphous silicon (ahyphen;Si:H) alloys has been investigated using photothermal deflection spectroscopy. The alloys studied were the large gap materialsahyphen;SiC:H andahyphen;SiO:H and the narrow gapahyphen;SiGe:H andahyphen;Ge:H. The results indicate a direct relationship between the gap energy and defect formation. As the gap opens, the number of metastable defects increases; whereas for the narrow gap materials, significantly fewer defects are observed. This behavior is consistent with the interpretation of defect formation by electronhyphen;hole recombination.