Performance for UV-LED grown on Al{sub}xGa{sub}(1-x)N with low-dislocation density

摘要

To realize high efficiency UV light emitting devices, thick AlGaN films with high-AlN molar fraction and high-crystalline quality are essential. Then, we propose the hetero-ELO growth. It comprises a first selective growth of GaN triangular-shape seed crystal through periodic SiO{sub}2 stripe masks and a second lateral growth of u-AlGaN layer through a low-temperature-deposited AlN interlayer. This technique resulted in the dislocation density of as low as mid-10{sup}7cm{sup}(-2) over whole wafer. UV-LED with an emission wavelength of 363mn and output power of 2.6 mW at 100 mA was successfully fabricated.