Crystal growth and characterization of In{sub}xGa{sub}(1-x)N with high indium composition grown by RF-MBE

摘要

We succeeded in growth of high In composition In{sub}xGa{sub}(1-x)N on (0001) sapphire by RF-MBE, which was difficult because of phase separation. We used low-temperature epitaxial growth method on low-temperature grown GaN or InN buffer layers. The low-temperature InN buffer layer improved surface morphology of the In{sub}xGa{sub}(1-x)N with high In content of x=0.71. We also demonstrated that In{sub}xGa{sub}(1-x)N with entire alloy composition could be grown using the low-temperature InN buffer layer with appropriate In composition controllability. It is found that crystallinity and electrical properties of In{sub}xGa{sub}(1-x)N (x>0.5) on the InN buffer layer were improved with increasing In composition.