Heteroepitaxial Si/Al2O3/Si structures

摘要

A doublehyphen;heteroepitaxial Si/ggr;hyphen;Al2O3/Si structure was realized. An epitaxial (100)Si layer with high quality was successfully grown on a (100)ggr;hyphen;Al2O3/(100)Si substrate by Si2H6gashyphen;source molecular beam epitaxy at substrate temperatures between 700 and 800thinsp;deg;C. The ggr;hyphen;Al2O3/Si substrate was fabricated by lowhyphen;pressure chemical vapor deposition with Al(CH3)3and N2O gases. The reflection highhyphen;energy electron diffraction patterns of the 3000hyphen;Aring;hyphen;thick Si epitaxial layer indicated streaked 2times;1 patterns. This Si film had a mirrorhyphen;like surface, and smooth surface morphology was observed from replica electron micrographs. From the Auger depth profile of the epitaxial layers, it was found that the doublehyphen;heteroepitaxial Si/Al2O3/Si structure had a sharper interface between Al2O3and the epitaxial Si film due to the low growth temperatures.