Development of high temperature etching for ferroelectric materials capacitor

摘要

The high temperature plasma etching system ULHITE NE-FeRAM series, which used a hard mask was developed. A sidewall deposition was free, and moreover a one mask etching in the profile of 80-degrees and more was realized. The high reliability of the system performance and the etching process (in such cases as an etching rate and a profile, the pattern dimension) and reappearance were proved by several hundred wafers of non-stop etching marathon tests. These results show that it is promising for the next generation FeRAM production.