Selfhyphen;assembled monolayer electron beam resist on GaAs

摘要

We present results on electron beam exposure of a selfhyphen;assembled monolayer film as a selfhyphen;developing positive resist on GaAs. A 1.5 nm thick monolayer ofnhyphen;octadecanethiol (C18H37SH) deposited on a GaAs (100) substrate showed a electron beam sensitivity of about 100 mgr;C/cm2. The monolayer resist was used as a mask for chemical etching of the GaAs. Patterns in GaAs have been created with widths approximately equal to the exposing electron beam width of 50 nm.