Low-frequency excess noise in large GaAs heterostructures-temperature and frequency dependence

摘要

The authors have measured the frequency, temperature and current dependence of the low-frequency excess noise of the voltage across GaAs-GaAlAs heterostructures carrying a bias current. The dependence of the noise on frequency and temperature reveals several types of noise. These are 1/f noise, generation-recombination noise and a third kind of noise which is well described by a model proposed by Bliek. This model deals with the spectrum of diffusion-controlled noise in a sample with finite geometry.