Hot-electron-induced degradation of conventional, minimum overlap, LDD and DDD N-channel MOSFETs

摘要

Substrate current characteristics of conventional minimum overlap, DDD (double-diffused drain), and LDD (lightly doped drain) n-channel MOSFETs with various LDD n/sup -/ doses have been studied. Threshold voltage shift, transconductance degradation, and change of substrate current for these devices after stressing were also investigated. The minimum gate/drain overlap devices had the highest substrate current and the worst hot-electron-induced degradation. The amount of gate-to-n/sup +/ drain overlap in LDD devices was an important factor for hot-electron effects, especially for devices with low LDD n/sup -/ doses. The injection of hot holes into gate oxide in these devices at small stressed gate voltages was observed and was clearly reflected in the change of substrate current. The device degradation of low-doped LDD n-channel MOSFETs induced by AC stress was rather severe.