Selective area growth of GaAs and In0.53Ga0.47As epilayer structures by chemical beam epitaxy using silicon shadow masks: A demonstration of the beam nature

摘要

Selective area growth of GaAs and In0.53Ga0.47As epilayer structure with wellhyphen;defined smooth edges has been achieved with a Si mask shadowing technique for chemical beam epitaxy (CBE). Epilayer stripes with widths as narrow as 2ndash;5 mgr;m have been replicated. An experiment was also conducted to unequivocally establish the beam nature of CBE and the absence of a stagnant gas boundary layer above the substrate surface during growth which is present in both atmospheric and lowhyphen;pressure metalorganic chemical vapor deposition.