The interfacial interactions between (HgCd)Te and Ti, an ultrareactive metal, have been examined using photoelectron spectroscopy with synchrotron radiation. Deposition of small quantities of Ti, which form tellurides that are thermodynamically more stable than HgTe or CdTe, causes a loss of both Hg and Cd from the interface. The rate of Hg depletion is greater than that of Cd and is greater than the rate of Hg depletion yet observed for any other overlayer metal. This greater Hg loss is attributed to the increased disruption of the semiconductor surface region caused by the loss of Cd. Unlike the cases of Al and In, but similar to that of Cr, no additional band bending is observing during the early stages of metal deposition.
展开▼
