Electroluminescence from Au/Si nitride film/Si with the film prepared by electron cyclotron resonance method

摘要

We use only nitrogen as the reaction gas to deposit on the cleaned Si wafer an extrahyphen;thin Si nitride film (sim;40 Aring;) by electron cyclotron resonance method. Electroluminescence (EL) with its peak wavelength at about 7000 Aring; from the semitransparent Au/extrahyphen;thin Si nitride film/phyphen;Si structure has been detected. The effects of forward bias and annealing on the EL have been studied. copy;1996 American Institute of Physics.