Graded band gap ohmic contact tophyphen;ZnSe

摘要

We describe a lowhyphen;resistance quasihyphen;ohmic contact tophyphen;ZnSe which involves the injection of holes from heavily doped ZnTe into ZnSe via a Zn(Se,Te) pseudograded band gap region. The specific contact resistance is measured to be in the range of 2ndash;8times;10minus;3OHgr;thinsp;cm2. The graded heterostructure scheme is incorporated as an efficient injector of holes for laser diode and light emitting diode devices, demonstrating the usefulness of this new contact scheme at actual device current densities.