首页> 外文期刊>IEICE transactions on electronics >Enhanced Characteristics of In_(0.5) Ga_(0.5)As Quantum Dot Infrared Photo Detector with Hydrogen Plasma Treatment
【24h】

Enhanced Characteristics of In_(0.5) Ga_(0.5)As Quantum Dot Infrared Photo Detector with Hydrogen Plasma Treatment

机译:Enhanced Characteristics of In_(0.5) Ga_(0.5)As Quantum Dot Infrared Photo Detector with Hydrogen Plasma Treatment

获取原文
获取原文并翻译 | 示例
           

摘要

Device characteristics of In_(0.5)Ga_(0.5)As/GaAs quantum dot infrared detector (QDIP) have been enhanced with hydrogen plasma treatment. After the hydrogen (H) plasma treatment, the dark currents were noticeably decreased and photoluminescence (PL) intensity was increased by H-passivation of interfacial traps between quantum dots and GaAs and of non-radiative defect centers caused during QD growths. Photo response, which could not be observed in as-grown QDIP due to large dark currents which obscured the photocurrent signal, was measured successfully after H-treatment due to H-passivation.

著录项

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号