144thinsp;deg;C operation of 1.3 mgr;m InGaAsP vertical cavity lasers on GaAs substrates

摘要

We report lasing at temperatures as high as 144thinsp;deg;C in longhyphen;wavelength InGaAsP vertical cavity lasers. The devices are optically pumped and employ a novel cavity design using GaAs/AlAs quarterhyphen;wavelength stacks for one mirror. The characteristic temperatureT0of the device increases from 42 K at room temperature to 81 K at temperatures above 80thinsp;deg;C as the gain peak moves into resonance with the longer wavelength cavity mode.