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首页> 外文期刊>semiconductor science and technology >Bound states in inversion layers on p-HgSUB1-x/SUBCdSUBx/SUBTe: self-consistent results
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Bound states in inversion layers on p-HgSUB1-x/SUBCdSUBx/SUBTe: self-consistent results

机译:Bound states in inversion layers on p-HgSUB1-x/SUBCdSUBx/SUBTe: self-consistent results

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摘要

Bound states in inversion layers on p-Hg1-xCdxTe are calculated self-consistently taking the interaction of the conduction and valence bands through the surface potential and the k.p interaction explicitly into account. Three different models of the band structure are compared and numerical results are presented. It is shown that the four-band spinless model, proposed by Zawadzki (1983) for InSb, is not appropriate to describe the bound states on Hg1-xCdxTe and more elaborate models, which take the spin-orbit interaction into account, have to be used.

著录项

  • 来源
    《semiconductor science and technology》 |1988年第1期|29-34|共页
  • 作者

    I Nachev;

  • 作者单位

    Inst. of Microelectron., Sofia, Bulgaria;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类
  • 关键词

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