The ability of a cwhyphen;pumped Ndthinsp;:thinsp;YAG laser to anneal processhyphen;induced slip damage in silicon is demonstrated via xhyphen;ray topography as well as Sirtl etching. Severely dislocated regions of a silicon wafer were scanned by the laser at various power levels. Xhyphen;ray topographs of the regions indicate that 55ndash;110 J/cm2can anneal even severely damaged material. Further, the depth of the anneal is estimated to be between 10 and 25 mgr;.
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