首页> 外文期刊>Journal of the European Ceramic Society >Structural and electrical properties of Sr2NaNb4O13 thin film grown by electrophoretic method using nanosheets synthesized from K(Sr2Na)Nb4O13 compound
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Structural and electrical properties of Sr2NaNb4O13 thin film grown by electrophoretic method using nanosheets synthesized from K(Sr2Na)Nb4O13 compound

机译:以K(Sr2Na)Nb4O13化合物为原料的纳米片电泳法生长的Sr2NaNb4O13薄膜的结构和电学性能

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摘要

Sr2NaNb4O13- (SNNO-) nanosheets were exfoliated from the K(Sr2Na)Nb4O13 compound that was synthesized at 1200 degrees C. The SNNO- nanosheets were deposited on a Pt/Ti/SiO2/Si substrate at room temperature by the electrophoretic method. Annealing was conducted at various temperatures to remove organic defects in the SNNO film. A crystalline SNNO phase without organic defects was formed in the film annealed at 500 degrees C. However, a SrNb2O6 secondary phase was formed in the films annealed above 600 degrees C, probably due to the evaporation of Na2O. The SNNO thin film annealed at 500 degrees C showed a dielectric constant of 74 at 1.0 MHz with a dielectric loss of 2.2. This film also exhibited a low leakage current density of 9.0 x 10(-8) A/cm(2) at 0.6 MV/cm with a high breakdown electric field of 0.72 MV/cm. (C) 2017 Elsevier Ltd. All rights reserved.
机译:从1200°C合成的K(Sr2Na)Nb4O13化合物中剥离了Sr2NaNb4O13-(SNNO-)纳米片。采用电泳法在室温下将SNNO-纳米片沉积在Pt/Ti/SiO2/Si衬底上。在不同温度下进行退火,以去除SNNO薄膜中的有机缺陷。在500°C退火的薄膜中形成了无有机缺陷的结晶SNNO相。然而,在600°C以上退火的薄膜中形成了SrNb2O6二次相,这可能是由于Na2O的蒸发。在500°C下退火的SNNO薄膜在1.0 MHz时显示出74的介电常数,介电损耗为2.2%。该薄膜在0.6 MV/cm时还表现出9.0 x 10(-8) A/cm(2)的低泄漏电流密度,以及0.72 MV/cm的高击穿电场。 (C) 2017 Elsevier Ltd.保留所有权利。

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