In order to clarify the origin of the dielectric relaxation current in (Ba,Sr)TiO{sub}3 thin films, thermally stimulated current (TSC) measurement is adopted combining the conventional current-voltage (I-V) and current-time (I-t) measurements. Two TSC peaks are observed from BST films before post-annealing, and the activation energies of these two traps are 0.20(±0.01)eV and 0.45(±0.02)eV. It is found that these two TSC peaks disappear after subsequent post-annealing in oxygen ambient in contrast to that the peaks drastically increase after the post-annealing in vacuum ambient. From these results, the oxygen vacancy is attributed to the origin of the dielectric relaxation current. Further, TSC characteristics for (Ba,Sr)TiO{sub}3 thin film capacitor with the thermal post-annealing shows the same change in the traps as I-V and I-t characteristics.
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