Two-dimensional precipitation of As clusters due to indium delta-doping of GaAs films grown by molecular beam epitaxy at low temperature

摘要

We have shown that two-dimensional layers of arsenic nanoclusters separated by a cluster-free GaAs matrix can be formed using indium delta-doping of GaAs films grown by molecular beam epitaxy at low temperature. Spatially ordered structures of As clusters have been obtained in epitaxial LT GaAs films doped with Si donors and Be acceptors and also in undoped films.