Control of titaniumhyphen;silicon and silicon dioxide reactions by lowhyphen;temperature rapid thermal annealing

摘要

Auger electron spectroscopy/depth profiling measurements demonstrate that titanium silicide forms between titanium and silicon dioxide at conventional annealing temperatures. Lowhyphen;temperature rapid thermal annealing provides a process window in time and temperature to suppress this parasitic reaction relative to silicide formation at titaniumhyphen;silicon interfaces within the same thinhyphen;film structure.