Effect of 3MeV-electron irradiation on photoluminescence (PL) properties of Eu-doped GaN was investigated. Eu was introduced into GaN epi-layers grown on sapphire substrate by ion implantation. The peak concentration of implanted Eu was found to be a few at. The electron dose was in the range of 10{sup}16-2×10{sup}17 cm{sup}2. PL was measured in the temperature range of 13-300 K by using He-Cd laser as an excitation source. PL intensity corresponding to the transition of 5{sup left}D{sub}0-7{sup left}F{sub}2 in Eu{sup}(3+) was hardly dependent on the electron dose in contrast PL intensity of near-band-edge emission from undoped CaN was decreased as increasing the electron dose.
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