ELECTROMIGRATION EFFECTS IN ALUMINUM FILM ON SILICON SUBSTRATES

摘要

A new nondestructive method is reported to investigate electromigrationhyphen;induced void formation in aluminum stripes on silicon substrates. Xhyphen;ray topography and optical microscopy are employed to characterize void nucleation at or below the film surface. Results are presented to show the correlation between xhyphen;ray and optical images of void structures in an aluminum stripe after dc current flow.