The ferroelectricity of sol-gel derived 80-nm Bi{sub}3.45La{sub}0.75Ti{sub}3O{sub}12 (BLT) films was found to be significantly enhanced by low-pressure baking during the sol-gel process. The ferroelectricity enhancement was caused by the low-pressure baking after the drying process in air and before the crystallization of the dried gel. The maximum remanent polarization (Pr) was 27.2 μC/cm{sup}2, which was achieved after baking at 1.3 kPa oxygen pressure. The coercive field of 54.3 kV/cm was also achieved at the same time. This Pr value is 2.3 times larger than the value attainable with the usual 1-atm baking process. The saturation property of the same capacitor proved that +/-2 V operation is possible. It was also found that the enhanced polarization is fatigue-free up to 10{sup}10 switching cycles.
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