Determination of the concentration and temperature dependence of the fundamental energy gap in AlxIn1-xSb

摘要

We use transmission spectroscopy to determine the energy gap for the AlxIn1-xSb alloy system in the Al concentration range from 0 to 25 from cryogenic to room temperature. The samples are epitaxial layers grown by molecular beam epitaxy on GaAs substrates. Our room temperature results are compared to those from two earlier studies. In our Al concentration range, we find a linear change of energy gap with alloy lattice constant. (C) 1998 American Institute of Physics. S0003-6951(98)03247-1. References: 7