Crystal growth model for low-temperature processed poly-Si by excimer laser annealing considering the recovery and recrystallization - based on dislocation theory

摘要

The growth model of the poly-Si related to the nucleation from the super cooled liquid has been presented. However, the growth model does not clarify the phenomenon that the crystallinity of poly-Si increases as the number of shot becomes large. We have examined the crystal growth of low-temperature processed poly-Si from a viewpoint of the recovery and recrystallization. This paper discusses the recovery, primary and secondary recrystallization for the ELA poly-Si from the view points of both the experimental result and theory and refers to the enlargement of the grains.