Indium phosphide on gallium arsenide heteroepitaxy with interface layer grown by flowhyphen;rate modulation epitaxy

摘要

We have grown and characterized heteroepitaxial films of InP on GaAs. We demonstrate that by using flowhyphen;rate modulation epitaxy to grow the interface layer in a twohyphen;step process, we can improve the quality of heteroepitaxy films. The full widths at half maximum of the xhyphen;ray rocking curve and the 10 K photoluminescence spectrum for a 6.2hyphen;mgr;mhyphen;thick InP/GaAs are 144 arcsec and 1.28 meV, respectively.