Photoluminescence characterization of pseudomorphic modulationhyphen;doped quantum wells at high carrier sheet densities

摘要

A systematic study has been made of the photoluminescence spectra of modulationhyphen;doped strainedhyphen;layer quantum wells at high electron sheet densities. Peaks associated with both then=1 andn=2 electron subbands are observed, and the relative intensities are shown to be a result of the symmetry properties of the quantum wells. It is demonstrated that only the full width half maximum of then=2 subband peak is useful for characterizing high carrier densities.