Surface morphology of epitaxial CaF2films on GaAs(100)

摘要

The surface morphology of CaF2films grown epitaxially on (100) GaAs substrates in an ultrahigh vacuum system is examined using reflection highhyphen;energy electron diffraction, scanning electron microscopy, and replica transmission electron microscopy. Proper substrate surface preparation and film deposition techniques are critical for obtaining epitaxial films which are crack free and smooth. We have demonstrated that group IIhyphen;A fluoride films which have a barely perceptible surface texture can be grown onto (100) oriented substrates.