High quality Fehyphen;doped semihyphen;insulating InP epitaxial layers grown by lowhyphen;pressure organometallic vapor phase epitaxy using tertiarybutylphosphine

摘要

High quality Fehyphen;doped semihyphen;insulating InP epitaxial layers were grown by lowhyphen;pressure organometallic vapor phase epitaxy using tertiarybutylphosphine (TBP) and triethylindium (TEI) as the reactant sources. Semihyphen;insulating InP epitaxial layers with specular surface morphology and low defect density were obtained at TBP partial pressure higher than 0.38 Torr. Electrical measurements on these layers showed the resistivity of TBPhyphen;grown materials to be comparable to that of PH3hyphen;grown materials over a measurement temperature range of 25 to 110thinsp;deg;C. A premature reaction between TEI and TBP was observed upstream from the substrate in which things such as TEI:TBP adducts and/or polymers could have been formed. This reaction occurred under low pressure, high gas flow conditions which effectively suppressed analogous reactions for TEI:PH3. As a result, the growth rate of Fehyphen;doped semihyphen;insulating InP layers grown at low pressure with TBP in our reactor decreased by 35percnt; as the V/III ratio was increased from 15 to 46.