The conductivity of the metalhyphen;silicon nitridehyphen;silicon dioxidehyphen;semiconductor structure has been studied over a wide range of temperatures, 2ndash;450 K, in a high electric field up to 8 MV/cm and magnetic field up to 70 kG. A strong positive magnetoresistance has been found at temperatures below 30 K. At temperatures of 30T250 K a weak negative magnetoresistance is observed. The existence of a positive magnetoresistance and its weak dependence on the magnetic field direction concerning that of current through a structure shows a hopping conductivity mechanism for silicon nitride film at temperatures below 30 K. Different hopping conductivity mechanisms in a high electric field have been discussed. The influence of a degradation process atT=4.2 K on the structurersquo;s conductivity has been investigated. Qualitative changes in the structurersquo;s conductivity during a degradation process have been found.
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