In modern materials science the characterisation of nanostructures is becoming increasingly important. For measurement of the quality of nanoscale multilayer arrangement with high spatial resolution a method is described that is based on the broadening of the spots in the Fourier transformation of transmission electron microscopic images of multilayer cross-sections. Using this method on Si/Ge superlattices with periodic lengths between 4 and 12 nm it could be quantitatively shown that the layer perfection decreases with increasing periodic length. The transition from elastic to plastic deformation between the Si and Ge layers at larger periodic lengths can be the reason for this behaviour.
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