Cross-sectional observation of resist patterns by focused ion beam etching

摘要

Cross-sections of resist patterns are observed using a 30 keV Ga+focused ion beam (FIB) maskless etching and a scanning electron microscope (SEM) for resist process monitoring in VLSI fabrication. The cross-sectional profiles of line and contact-hole resist patterns with submicron dimensions were prepared using a g-line optical stepper. These patterns are successfully observed by a combination of FIB sectioning and SEM observation. Moreover, cross-sectional observation of 3 mu m deep and 0.8 mu m diameter contact-hole resist patterns are demonstrated.