The binding energy of shallow hydrogenic impurities in parabolic quantum dots is calculated using a variational approach within the effective mass approximation. The binding energies are worked Out for GaAs/Ga1-xAlxAs Structures as a function of dot size when the static pressure and the magnetic field are applied simultaneously. The results Show that the impurity binding energy (i) increases with the reduction in dot sizes for a given pressure and magnetic field; (ii) decreases for a given dot in the presence of pressure; (iii) increases for a given dot by the influence of magnetic field and (iv) increases for a given clot in the presence of pressure and magnetic field applied simultaneously. The result shows that the ionization energy is purely pressure dependent for dots of size less than an effective Bohr radius. The results are Compared with available data in the literature.
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