SiO{sub}2 thin films were fabricated at room temperature by ablation of organopolysiloxane with an ArF excimer laser. (Si-O){sub}n chains of the target were selectively deposited on a substrate in high laser fluence at about 10 J/cm{sup}2. When we used oxygen gas during ablation, Si-O-Si bonds of the films approached those of a silica glass, in addition to reducing carbon mixed into the films. As a result, the transmittance of the 400-nm-thick film showed about 95 at a 500 nm wavelength. The refractive index was 1.416 at a 633 nm wavelength. The electrical resistivity of higher than 10{sup}7Ω m was also obtained. From the x-ray photoelectron spectroscopy spectra, the Si 2p peak of the films indicated to be SiO{sub}2.
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