Nondestructive technique for the detection of dislocations and stacking faults on silicon wafers

摘要

We demonstrate the imaging of dislocations and stacking faults in silicon wafers in a noncontact, nondestructive fashion using laser based modulated optical reflectance. By comparison with conventional wet decoration etching, we show that the sensitivity of the modulated optical reflectance method can resolve the difference between two types of dislocations.