Single-Electron Transfer between Two Donors in Thin Nanoscale Silicon Transistors

摘要

We study single-electron transfer between two donor atoms in the thin channel of nanoscale silicon field-effect transistors. One donor works as a steppingstone in the conduction path, while another donor works as a single-electron trap. Hysteresis in single-electron tunneling current is examined and modeled to lead to the single-electron transfer event between the two donors. We found that the coupling between the potential of the trapping donor and the interface plays a key role in this phenomenon.