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首页> 外文期刊>applied physics letters >Insituxhyphen;ray diffraction study of the antiferroelectricndash;ferroelectric phase transition in PLSnZT
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Insituxhyphen;ray diffraction study of the antiferroelectricndash;ferroelectric phase transition in PLSnZT

机译:Insituxhyphen;ray diffraction study of the antiferroelectricndash;ferroelectric phase transition in PLSnZT

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Insituxhyphen;ray diffraction studies were performed on the PLSnZT antiferroelectricndash;ferroelectric phase switching ceramic and polycrystalline powder. The crystallography of both the antiferroelectic and electrichyphen;fieldhyphen;induced ferroelectric phases were determined for the approximate composition of Pb0.98La0.02(Zr0.55Sn0.33Ti0.12)0.995O3. A preferred antiferroelectric domain structure has been identified and possible mechanisms responsible for the domain structure are presented. A single tetragonal phase has been identified for the room temperature zerohyphen;field antiferroelectric material with unit cell dimensionsa=4.107Aring; andc=4.081Aring;. An electric fieldhyphen;induced structure developing at the antiferroelectricndash;ferroelectric switching field has also been observed and determined to be of rhombohedral symmetry witha=4.105Aring; and thgr;=89.85deg; indicating a volume increase of 0.49percnt; for the tetragonalndash;rhombohedral transition. copy;1996 American Institute of Physics.

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