Ordering of Al0.5Ga0.5P by highhyphen;energy electron irradiation

摘要

A longhyphen;range order of Al0.5Ga0.5P layers grown by electron beam epitaxy on a (100)thinsp;GaP substrate has been detected. Surfaces of Al layers deposited by vacuum evaporation on GaP wafers were irradiated with a fluence of (1ndash;5)times;1017electronsthinsp;cmminus;2at 7 MeV and 50thinsp;deg;C. It is speculated that since a great number of electronhyphen;hole pairs are created, the strong enhancement of the diffusion of Al atoms may be caused by the energy release mechanism and an Al interstitial may preferably occupy a Ga site by the lsquo;lsquo;kickhyphen;outrsquo;rsquo; mechanism and for the formation of much stabler bonds between group III and V atoms.