Fabrication of InGaAs quantum dots formation along GaAs multiatomic steps

摘要

The uniform and self-aligned S-K mode InGaAs quantum dots were formed on GaAs multiatomic steps on (001) vicinal surface by MOVPE. Under optimum In content (x = 0.8) and InGaAs layer thickness (3.2ML) condition highly uniform InGaAs quantum dots were obtained. The size distribution of InGaAs dots depends on GaAs multiatomic step width strongly. The misorientation angle dependence on the formation of InGaAs quantum dots on GaAs multiatomic steps were also observed by AFM and PL. The results of PL measurement agreed well with AFM results.