Phases Observed in Oxygenhyphen;Reactive Sputtering of Tantalum

摘要

Ta films were deposited by dc diode sputtering in Arsngbnd;O2. The crystalline structure of the deposited films was investigated by widehyphen;film Debyehyphen;Scherrer xhyphen;ray diffraction. Films were bgr;hyphen;Ta at low O2partial pressures, passing through a crystalline suboxide to the bcc phase with increasing O2content. The results contradict recent suggestions that bgr;hyphen;Ta is formed to accommodate higher impurity levels.