Capacitance detected magnetic resonance in-irradiated pSUP+/SUP-i-nSUP+/SUPsilicon diodes

摘要

Magnetic resonance of defects in silicon p+-i-n+diodes has been observed via the photocapacitance as well as via the dark capacitance under conditions of forward bias. The photovoltaic detected resonances are discussed in terms of capacitive and conductance components of the signals and sub-band-gap excitation has allowed the optical depth of a defect to be determined.