We have fabricated high quality, dielectric Ga2O3thin films. The films with thicknesses between 40 and 4000 Aring; were deposited by electronhyphen;beam evaporation using a singlehyphen;crystal high purity Gd3Ga5O12source. Metalhyphen;insulatorhyphen;semiconductor (MIS) and metalhyphen;insulatorhyphen;metal structures (MIM) were fabricated in order to determine dielectric properties, which were found to depend strongly on deposition conditions such as substrate temperature and oxygen pressure. We obtained excellent dielectric properties for films deposited at substrate temperatures of 40thinsp;deg;C with no excess oxygen and at 125thinsp;deg;C with an oxygen partial pressure of 2times;10minus;4Torr. Specific resistivities rgr; and dc breakdown fieldsEmof up to 6times;1013OHgr;thinsp;cm and 2.1 MV/cm, respectively, were measured. Static dielectric constants between 9.93 and 10.2 were determined for these films. Like in other dielectrics, the current transport mechanisms are found to be bulk rather than electrode controlled.
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