Dopant redistribution in siliconhyphen;onhyphen;sapphire films during thermal annealing

摘要

Arsenic depth distributions in siliconhyphen;onhyphen;sapphire films, after annealing at 900thinsp;deg;C for a range of times, have been studied by Rutherford backscattering and spreading resistance techniques. A continuum pipe diffusion model is developed which accounts satisfactorily for the rapid diffusion and segregation effects observed. In addition, the same model predicts twohyphen;dimensional dopant profiles with several novel features relevant to microelectronic device processing.