The effect of growth parameters on the intrinsic properties of large-area single layer graphene grown by chemical vapor deposition on Cu

摘要

We present a comprehensive study of the parameter space for single layer graphene growth by chemical vapor deposition on Cu. The temperature is the most widely recognized control parameter in single layer graphene growth. We show that the methane-to-hydrogen ratio and the growth pressure also are critical parameters that affect the structural perfection and the cleanliness of graphene. The optimal conditions for suppressing double and multilayer graphene growth occur near 1000 °C, 1:20 methane-to-hydrogen ratio, and a total pressure in the range from 0.5 to 1 Torr. Raman mapping of a 40 x 30 μm~2 area shows single layer domains with 5-10 μm linear dimensions. Atomic resolution imaging of suspended graphene by aberration corrected scanning transmission electron microscopy shows that the single layer graphene consists of areas of 10-15 nm linear dimensions and smaller patches of residual contamination that was undetected by other characterization methods.