Thermal equilibrium process in undoped hydrogenated amorphous silicon and siliconhyphen;carbon alloy films

摘要

We find the thermally induced defects in undoped hydrogenated amorphous silicon carbon (ahyphen;Si1minus;xCx@B:H) by electron spin resonance and conductivity measurements. The equilibrium temperature (Te) determined from the annealing temperaturehyphen;dependent density of dangling bonds after fast cooling decreases with increasing C content, from 190thinsp;deg;C for hydrogenated amorphous silicon to 150thinsp;deg;C forahyphen;Si0.82C0.18@B:H. Possible microscopic mechanisms for the observed thermally induced defects inahyphen;Si1minus;xCx@B:H alloys are discussed.