High-Yield Two-Dimensional CdS Nanowire Networks Synthesized by a Low-Temperature Chemical Method

摘要

We report here on a one-step chemical procedure for the synthesis of monolayer and multilayer CdS square grid planar nanowire networks (SGP-NWNs). This procedure utilizes a chelation—deposition—epitaxy (CDE) mechanism to convert Cd(CH3COO)2·2H2O/S/C_(32)H_(66) through the multilayer structures of bismuth triiodide (BiI3) flakes to CdS SGP-NWNs. In the CDE synthesis, ordered pyramid-shaped nanoparticles and SGP-NWNs were formed at 160 and 185 °C, respectively. TEM and SEM characterizations indicate that the SGP networks consist of interconnected CdS single-crystalline nanowires. A systematic investigation of the correlation between the preparation conditions and the morphologies of the nanostructures suggests that the formation of SGP-NWNs is attributed to the electrostatic force between the Bi—I bonds and Cd cations acting on the CdS nanowire, isotropic crystalline growth. Further experimentation demonstrates that using BiI3 flake and CDE procedures similar to nanowire networks of different chemical compositions can be synthesized on a variety of substrates.